Etching-resistant photoresist, preparation methods and application thereof and photoetching method

The invention relates to the field of a semiconductor and an integrated circuit and discloses photoresist, preparation methods and application thereof and a photoetching method. The photoresist contains resin and photo acid generator. The resin contains 5-20wt% of unit monomer I, 10-30wt% of unit monomer II and 50-70wt% of unit monomer III. The unit monomer I is macromonomer with an acrylate repeating unit of which side chain contains fullerene, as shown by the following formula (1). The unit monomer II is macromonomer with the acrylate repeating unit of which side chain contains hematoporphyrin monomethyl ether, as shown by the following formula (2). The unit monomer III is the monomer capable of being copolymerized with the unit monomer I and the unit monomer II. R , R and R arehydrogen atoms or alkyl of C -C , m is 10-30 and n is 10-50. According to the photoresist provided by the invention, an etching rate and groove filling capacity the same as those of amorphous carbon can be achieved; and in a forming