SEMICONDUCTOR DEVICE

Provided is a semiconductor device comprising an active portion and a terminal structure portion. The device has the active portion disposed on a semiconductor substrate, and the terminal structure portion disposed at a terminal on an upper surface side of the semiconductor substrate to relax an electric field at the terminal. An electric field distribution on the upper surface side of the terminal structure portion may be such that, when a rated voltage is applied, the electric field at an end on the active portion is smaller than a maximum value of the electric field distribution on the upper surface side. The electric field distribution in the terminal structure portion may have a maximum peak of electric field on an edge side opposite the active portion rather than at the center of theterminal structure portion. 本发明提供具备有源部和终端结构部的半导体装置。所述半导体装置具备：设置于半导体基板的有源部以及设置于半导体基板的正面侧的终端且缓和终端的电场的终端结构部。在施加额定电压时，对于终端结构部的正面侧的电场分布而言，有源部侧的端部的电场可以比正面侧的电场分布的最大值小。另外，终端结构部的电场分布在比终端结构部的中心靠近与有源部相反的边缘侧的位置可以具有电场的最大峰。