Copper thick film etching solution

Provided is a copper thick film etching solution which has a high etching rate and can achieve etching under a high copper ion concentration to increase the film thickness of copper to maintain a conventional manufacturing speed. A copper thick film etching solution containing hydrogen peroxide, a highly acidic substance, an amine compound, a hydrogen peroxide decomposition inhibitor, azole and water and have a pH value less than 2 can etch the copper film at an etching rate over 380nm/min under a high copper ion concentration of 20000 ppm and a taper angle can also be further adjusted to 30 degrees to 80 degrees. 提供：蚀刻速率高、在高铜离子浓度下也能进行蚀刻使得铜的膜厚变厚以可以维持以往那样的制造速度的铜厚膜用蚀刻液。包含过氧化氢、强酸性物质、胺化合物、过氧化氢分解抑制剂、唑类和水、且pH低于2的铜厚膜用蚀刻液在铜离子浓度为20000ppm的高铜离子浓度下也可以以380nm/分钟以上的蚀刻速率对铜膜进行蚀刻，进步锥角也可以调整为30°～80°。