SEMICONDUCTOR DEVICE WITH A CZ SEMICONDUCTOR BODY AND METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE WITH A CZ SEMICONDUCTOR BODY

A method of manufacturing a semiconductor device includes reducing an oxygen concentration in a first part of a CZ semiconductor body by a thermal treatment. The first part adjoins a first surface ofthe semiconductor body. The semiconductor body is processed on the first surface. A thickness of the semiconductor body is reduced by thinning the semiconductor body at a second surface relative to the first surface. Thereafter, in the semiconductor body, a field stop zone is formed by proton implantations through the second surface and annealing of the semiconductor body. The field stop zone extends into the first part of the CZ semiconductor body. 种制造半导体器件的方法包括通过热处理来降低在CZ半导体本体的第部分中的氧浓度。该第部分邻接半导体本体的第表面。在第表面处处理半导体本体。通过在与第表面相对的第二表面处使半导体本体变薄来降低半导体本体的厚度。此后，由通过第二表面的质子注入和半导体本体的退火来在半导体本体中形成场停止区域。该场停止区域延伸到CZ半导体本体的第部分中。