Method for making a semiconductor laser diode, and laser diode

The invention relates to a method for making a semiconductor laser diode, and a laser diode. The method for making a laser diode with a distributed grating reflector (RT) in a planar section of a semiconductor laser with stabilized wavelength includes providing a diode formed by a substrate, a first cladding layer arranged on the substrate, an active layer arranged on the first cladding layer andadapted to emit a radiation, and a second cladding layer arranged on the active layer, said cladding layers being adapted to form a heterojunction to allow for efficient injection of current into theactive layer and optical confinement, and a contact layer. The manufacturing method provides for creating, on a first portion of the device, a waveguide for confinement of the optical radiation and, on the remaining portion of the device, two different gratings for light reflection and confinement. The two gratings define two different zones, wherein the first zone includes a grating of low orderand high duty cycle, and is