Preparation and photocatalytic application of transition metal disulfide thin film

The invention discloses a preparation and photocatalytic application of a transition metal disulfide thin film, and belongs to the field of transition metal disulfide photocatalysts. A multi-layer layered semi-metallic platinum selenide (PtSe2) thin film is successfully prepared by vacuum evaporatio...

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Hauptverfasser: ZHENG YANZHEN, WU JIAOJIAO, TAO XIA, LYU XINDING, ZHANG HECHUAN
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention discloses a preparation and photocatalytic application of a transition metal disulfide thin film, and belongs to the field of transition metal disulfide photocatalysts. A multi-layer layered semi-metallic platinum selenide (PtSe2) thin film is successfully prepared by vacuum evaporation plating and a chemical vapor deposition low temperature selenide method. Platinum selenide has super-high electron transmission capacity, and is deposited on the surface of a semiconductor photocatalyst to form a platinum selenide-semiconductor thin film, and the thin film is applied to photocatalytic hydrogen production. The prepared platinum selenide-semiconductor thin film is easily separated from a bulk aqueous phase after heterogeneous reaction and easy to reuse, thereby having ultra-highstability. Platinum selenide can effectively inhibit the recombination of electrons and holes by rapidly conducting photoelectrons on a conduction band of the semiconductor photocatalyst, thereby greatly improving the photoc