Cutting method for improving edge warpage of silicon wafer

The invention relates to the technical field of semiconductor processing, and discloses a cutting method for improving edge warpage of a silicon wafer. In a portion with the cutting depth of 0-8 mm, the flow of mortar is 68-70 L/min; in a portion with the cutting depth of 8-18 mm, the flow of the mortar linearly decreases and is (2* cutting depth value +52) L/min; in a portion with the cutting depth of 18-98 mm, the flow of the mortar is 80 L/min; in a portion with the cutting depth of 98-122 mm, the flow of the mortar sequentially and gradually decreases from 80 L/min to 61 L/min; in a portion with the cutting depth of (122-A) mm, the flow of the mortar is 61 L/min, wherein A is the maximum outer diameter value of crystal bars and is within 128-132 mm. According to the method, by optimizing the flow of the mortar at different cutting depths, the edge warpage problem of the silicon wafer is obviously solved. 本发明涉及半导体加工技术领域。种改善硅片边缘翘曲的切割方法，在切割深度为0mm-8mm位置处，且砂浆的流量为68L/min-70L/min；在切割深度为8mm-18mm位置处时，砂浆的流量呈线性递减，且砂