ETCHING METHOD AND RESIDUE REMOVAL METHOD

The invention provides an etching method and residue removal method, and even if etching residue removal is performed after etching a silica-based residue, a residual SiO2 film is not liable to be damaged. An etching method of etching a silica-based residue containing a base component formed in an SiO2 film includes a first stage of selectively etching the silica-based residue by supplying an HF gas, an H2O gas or an alcohol gas to a target substrate having the SiO2 film, on which the silica-based residue is formed, and a second stage of removing an etching residue generated in the first stageafter the first stage, the second stage has a first process of supplying an H2O gas or an alcohol gas to the target substrate and a second process of heating the target substrate after the first process. 本发明提供种即使在对二氧化硅系残渣物进行蚀刻后进行蚀刻残渣去除也不易产生对残留的SiO膜的损伤的蚀刻方法和残渣去除方法。用于对形成于SiO膜的含有碱成分的二氧化硅系残渣物进行蚀刻的蚀刻方法具有：第阶段，向具有形成有二氧化硅系残渣物的SiO膜的被处理基板供给HF气体、以及HO气体或醇气体来选择性地对二氧化硅系残渣物进行蚀刻；以及第二阶段，在第阶段后，去除通过第阶段而产生的蚀刻残渣，其中，第二阶段具有：第工序，向被处理基板供给HO气体或醇气