A deep-groove semi-superstructure power device and a manufacturing method thereof

The invention relates to a deep groove semi-superstructure power device and a manufacturing method thereof, Deep-channel semi-superjunction structure based on improved semi-superjunction structure, Compared with the traditional semi-superjunction structure, the semi-superjunction effect is generated between the superjunction structure and the source region through the bulk voltage support layer, and the trench gate is deep and runs through the whole bulk voltage support layer, which can further reduce the on-resistance on the basis of the semi-superjunction structure. 本发明涉及种深槽半超结构功率器件及制造方法，基于半超结改进结构的深槽半超结结构，与传统半超结结构相比，没有底部的电压支持层，而是在超结结构与源区之间通过体电压支持层产生半超结效应，同时沟槽栅较深，且贯穿整个体电压支持层，能够在半超结结构基础上，进步降低导通电阻。