A surface phase change treatment method for cut silicon wafer by a diamond wire saw

A surface phase change treatment method for cut silicon wafer by a diamond wire saw

A surface phase change treatment method for cut silicon wafer by a diamond wire saw comprise a monocrystalline silicon wafer and a polycrystalline silicon wafer, characterized in that the diamond wiresaw cutting silicon wafer is heated to a temperature of 600 to 1100 DEG C at a rate of >= 30 DEG...

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Hauptverfasser: ZHOU LANG, ZHANG JINBING, WEI XIUQIN, YE XINGFANG
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator ZHOU LANG
ZHANG JINBING
WEI XIUQIN
YE XINGFANG
description A surface phase change treatment method for cut silicon wafer by a diamond wire saw comprise a monocrystalline silicon wafer and a polycrystalline silicon wafer, characterized in that the diamond wiresaw cutting silicon wafer is heated to a temperature of 600 to 1100 DEG C at a rate of >= 30 DEG C / min in a nitrogen/hydrogen or argon-hydrogen mixed atmosphere, keeping the temperature for 0.5 - 3hours, and then cooled to
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As shown in Table 1, that rigid stone wire saw cutting silicon wafer is suitable for conventional wet flocking; the surface light reflectance of the polycrystalline silicon wafer after flocking is reduced to 19-21%. As shown in FIG. 1, that microtopography of the polysilicon pile surface obtain is uniform, rounded and the cut grain is eliminated; After texturing, the surface reflectance of monocrystalline silicon decreases to 11 - 12%, and the microtopography of monocrystalline silicon texture is evenly distributed. 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As shown in Table 1, that rigid stone wire saw cutting silicon wafer is suitable for conventional wet flocking; the surface light reflectance of the polycrystalline silicon wafer after flocking is reduced to 19-21%. As shown in FIG. 1, that microtopography of the polysilicon pile surface obtain is uniform, rounded and the cut grain is eliminated; After texturing, the surface reflectance of monocrystalline silicon decreases to 11 - 12%, and the microtopography of monocrystalline silicon texture is evenly distributed. 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As shown in Table 1, that rigid stone wire saw cutting silicon wafer is suitable for conventional wet flocking; the surface light reflectance of the polycrystalline silicon wafer after flocking is reduced to 19-21%. As shown in FIG. 1, that microtopography of the polysilicon pile surface obtain is uniform, rounded and the cut grain is eliminated; After texturing, the surface reflectance of monocrystalline silicon decreases to 11 - 12%, and the microtopography of monocrystalline silicon texture is evenly distributed. The method is simple and easy to operate, low in cost and suitabl</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title A surface phase change treatment method for cut silicon wafer by a diamond wire saw
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