A surface phase change treatment method for cut silicon wafer by a diamond wire saw

A surface phase change treatment method for cut silicon wafer by a diamond wire saw

A surface phase change treatment method for cut silicon wafer by a diamond wire saw comprise a monocrystalline silicon wafer and a polycrystalline silicon wafer, characterized in that the diamond wiresaw cutting silicon wafer is heated to a temperature of 600 to 1100 DEG C at a rate of >= 30 DEG...

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Bibliographische Detailangaben
Hauptverfasser: ZHOU LANG, ZHANG JINBING, WEI XIUQIN, YE XINGFANG
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A surface phase change treatment method for cut silicon wafer by a diamond wire saw comprise a monocrystalline silicon wafer and a polycrystalline silicon wafer, characterized in that the diamond wiresaw cutting silicon wafer is heated to a temperature of 600 to 1100 DEG C at a rate of >= 30 DEG C / min in a nitrogen/hydrogen or argon-hydrogen mixed atmosphere, keeping the temperature for 0.5 - 3hours, and then cooled to