TARGETED PRODUCTION OF 2,2,3,3-TETRASILYL TETRASILANE
The subject matter of the present invention is octasilane 2,2,3,3-tetrasilyl tetrasilane 1, compositions which have, in addition to 2,2,3,3-tetrasilyl tetrasilane 1, one or more other constituents which are not 1, a method for producing 2,2,3,3-tetrasilyl tetrasilane 1 and mixtures of higher hydrido...
Gespeichert in:
Hauptverfasser: | , , , |
---|---|
Format: | Patent |
Sprache: | chi ; eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | The subject matter of the present invention is octasilane 2,2,3,3-tetrasilyl tetrasilane 1, compositions which have, in addition to 2,2,3,3-tetrasilyl tetrasilane 1, one or more other constituents which are not 1, a method for producing 2,2,3,3-tetrasilyl tetrasilane 1 and mixtures of higher hydridosilanes having 1. Further subject matter of the present invention is the use of 1 and mixtures of higher hydridosilanes having 1, for depositing material containing silicon.
本发明提供了辛硅烷2,2,3,3-四甲硅烷基丁硅烷1、包含除了2,2,3,3-四甲硅烷基丁硅烷1之外种或多种不是1的附加成分的组合物、制备2,2,3,3-四甲硅烷基丁硅烷1以及包含1的高级氢硅烷的混合物的方法。本发明进步提供了1以及包含1的高级氢硅烷的混合物用于沉积含硅材料的用途。 |
---|