High-Dielectric Constant Capacitor Structure on III-V Substrate

The invention relates to a high-dielectric constant capacitor structure on an III-V substrate. A semiconductor structure includes a III-V semiconductor structure; a first electrode; a first barrier layer disposed over the first electrode; a first adhesion layer disposed over the first electrode; a first passivation layer disposed over the first adhesion layer; a dielectric layer disposed over thefirst passivation layer; a second passivation layer disposed over the dielectric layer; a second adhesion layer disposed over the second passivation layer; a second barrier layer disposed over the second adhesion layer; and a second electrode disposed over the second barrier layer. 本公开涉及种III-V衬底上的高介电常数电容器结构。种半导体结构包含III-V半导体结构；第电极；安置于所述第电极上方的第阻挡层；安置于所述第电极上方的第粘附层；安置于所述第粘附层上方的第钝化层；安置于所述第钝化层上方的介电层；安置于所述介电层上方的第二钝化层；安置于所述第二钝化层上方的第二粘附层；安置于所述第二粘附层上方的第二阻挡层；以及安置于所述第二阻挡层上方的第二电极。