PLASMA DEPOSITION METHOD

A plasma deposition method in which a cover layer is deposited onto the internal walls of an empty plasma chamber by plasma deposition of a precursor mixture comprising (i) one or more hydrocarbon compounds of formula (A), or (ii) one or more C1-C3 alkane, C2-C3 alkene or C2-C3 alkyne compounds: (Fo...

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Bibliographische Detailangaben
Hauptverfasser: LIONE RICHARD ANTHONY, SINGH SHAILENDRA VIKRAM
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:A plasma deposition method in which a cover layer is deposited onto the internal walls of an empty plasma chamber by plasma deposition of a precursor mixture comprising (i) one or more hydrocarbon compounds of formula (A), or (ii) one or more C1-C3 alkane, C2-C3 alkene or C2-C3 alkyne compounds: (Formula (A)) wherein: Z1 represents C1-C3 alkyl or C2-C3 alkenyl; Z2 represents hydrogen, C1-C3 alkylor C2-C3 alkenyl; Z3 represents hydrogen, C1-C3 alkyl or C2-C3 alkenyl; Z4 represents hydrogen, C1-C3 alkyl or C2-C3 alkenyl; Z5 represents hydrogen, C1-C3 alkyl or C2-C3 alkenyl; and Z6 represents hydrogen, C1-C3 alkyl or C2-C3 alkenyl. 种等离子体沉积方法,其中,通过前体混合物的等离子体沉积将覆盖层沉积在空等离子体腔室的内壁上,所述前体混合物包含(i)种或多种式(A)的烃化合物;或(ii)种或多种C-C烷烃、C-C烯烃或C-C炔烃化合物:(式(A))其中:Z表示C-C烷基或C-C烯基;Z表示氢、C-C烷基或C-C烯基;Z表示氢、C-C烷基或C-C烯基;Z表示氢、C-C烷基或C-C烯基;Z表示氢、C-C烷基或C-C烯基;以及Z表示氢、C-C烷基或C-C烯基。