MAGNETIC MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

Disclosed are a magnetic memory device and a method of fabricating the same. The magnetic memory device comprises a bottom electrode on a substrate, a magnetic tunnel junction pattern including a first magnetic layer, a tunnel barrier layer, and a second magnetic layer that are sequentially stacked on the bottom electrode, and a top electrode on the magnetic tunnel junction pattern. The bottom electrode comprises a first bottom electrode and a second bottom electrode on the first bottom electrode. Each of the first and second bottom electrodes comprises metal nitride. The first bottom electrode has a crystallinity higher than that of the second bottom electrode. 公开了种磁存储器件及其制造方法。该磁存储器件包括：底电极，在衬底上；磁隧道结图案，包括顺序地堆叠在底电极上的第磁性图案、隧道势垒图案和第二磁性图案；以及顶电极，在磁隧道结图案上。底电极包括第底电极和在第底电极上的第二底电极。第底电极和第二底电极中的每个包括金属氮化物。第底电极具有比第二底电极的结晶度高的结晶度。