Terahertz wave detector

The invention belongs to the technical field of detectors, in particular to a terahertz wave detector. An AlGaN/GaN high-electron-mobility field effect transistor (HEMT) serves as a basic structure, aAlGaN/GaN layer is prepared by an epitaxial method through substrate design. Then an active region mesa, a gate dielectric, an ohmic contact window and an electrode are prepared. The two-dimensionalelectron gas in the obtained field effect transistor has relatively high electron concentration and mobility. A wave spectrum detection device with high-speed, high-sensitivity and high signal-to-noise ratio detection for THz waves under a room temperature condition is obtained, and the terahertz wave detection is finally realized. 本发明属于探测器技术领域，具体涉及种太赫兹波探测器。以铝镓氮/镓氮高电子迁移率场效应晶体管（HEMT）为基本结构，通过衬底设计、利用外延法制备铝镓氮/镓氮层；然后制备有源区台面、栅介质、欧姆接触窗口、电极，得到的场效应晶体管中的二维电子气具有较高的电子浓度和迁移率，得到在室温条件下对THz波实现高速、高灵敏度、高信噪比探测的波谱探测装置，最终实现对太赫兹波的探测。