Method of manufacturing semiconductor device

It stops the flow of a solder almost without being influenced by the temperature. A method of manufacturing a semiconductor device comprises: a step of bonding a wire (W1) to a main surface (4a) by ultrasonic bonding in a state in which the wire (W1) surrounds a region (Rg1) to be a supply target of a solder (3n) in the main surface (4a) of a substrate (4); and a step of supplying the solder (3n)for bonding an electrode terminal (E1) to the substrate (4) to the region (Rg1). 几乎不受气温的影响地使焊料的流动停止。半导体装置的制造方法包含下述工序：在导线(W1)将基板(4)的主面(4a)中的成为焊料(3n)的供给对象的区域(Rg1)包围的状态下，通过超声波接合，将导线(W1)与主面(4a)接合的工序；以及将用于使电极端子(E1)与基板(4)接合的焊料(3n)供给至区域(Rg1)的工序。