An integrated method of cadmium telluride thin film battery

The invention discloses an integrated method of a cadmium telluride thin film battery, The top-down structure of CdTe thin film solar cells is as follows: The back electrode layer, window layer, cadmium telluride light absorbing layer, transparent conductive layer and glass substrate are integrated...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: MA LIYUN, PAN JINGONG, YIN XINJIAN, LI YANG, PENG SHOU, ZHAO LEI, WANG YANJUE
Format: Patent
Sprache:chi ; eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The invention discloses an integrated method of a cadmium telluride thin film battery, The top-down structure of CdTe thin film solar cells is as follows: The back electrode layer, window layer, cadmium telluride light absorbing layer, transparent conductive layer and glass substrate are integrated by two-step laser etching to complete the integration of cadmium telluride thin film battery. The method can well control the scribing dead zone, improve the short-circuit current and fill factor of cadmium telluride thin film battery, thereby improving the conversion efficiency of cadmium telluridethin film battery. 本发明公开种碲化镉薄膜电池的集成方法,碲化镉薄膜太阳能电池自上而下的结构依次是:背电极层、窗口层和碲化镉光吸收层、透明导电层、玻璃基底,通过两步激光刻蚀,完成碲化镉薄膜电池的集成,该方法能够很好的控制刻线死区,提高碲化镉薄膜电池的短路电流、填充因子,从而提高碲化镉薄膜电池的转换效率。