Etching method and etching device

An object of the invention is to improve the quality of FPD. In the carry-in process, the substrate to be processed in which a plurality of elements including the first Ti film, the Al film, and the second Ti film are formed on the semiconductor layer is carried into the cavity. In the supply step, the first process gas is supplied into the chamber. In the first etching step, the second Ti film included in the electrode layers of the respective elements is etched by the plasma of the first processing gas, and the Al film included in the electrode layers of the respective elements is etched until the first Ti film is exposed in one of the elements. In the switching step, the processing gas supplied into the chamber is switched from the first processing gas to the second processing gas containing the N 2 gas. In the second etching step, the electrode layer of each element is etched again by the plasma of the second processing gas. 本发明的目的在于提高FPD的品质。在搬入工序中，设置有多个包括第Ti膜、Al膜和第二Ti膜的电极层形成于半导体层上的多个元件的被处理基片被搬入腔体内。在供给工序中