Method for growing large-area single-crystal diamonds by means of cross-splicing

The invention discloses a method for growing large-area single-crystal diamonds by means of cross-splicing. N single-crystal diamonds are spliced, and n is a positive integer which is more than or equal to 2, wherein the to-be-grown surfaces of the two adjacent single-crystal diamonds are not parallel and a crossing point is formed on the adjacent single-crystal diamonds; complete large single-crystal diamonds are grown simultaneously on the to-be-grown surfaces of the n single-crystal diamonds. Started from the crossing point, a single-crystal microstructure connected with the two diamonds isgrown, and then the range is gradually widened to the whole splicing inclined surface, so that firm connection of the two diamonds is realized and single crystals are formed in the splicing inclinedsurfaces, and thus, a new method is provided for growing the large-area single-crystal diamonds by means of splicing. 本发明公开了种交叉拼接生长大面积单晶金刚石的方法，n个单晶金刚石拼接，n为大于等于2的正整数；其中，两两相邻单晶金刚石的待生长面不平行，且在相邻的待生长面上形成交叉点；在n个单晶金刚石的待生长面上同时生长出完整的大单