Gallium-tin oxide semiconductor film and preparation method and application thereof

The invention relates to a gallium-tin oxide semiconductor film and a preparation method and application thereof. The method comprises: S1, gallium metal salt and tin metal salt dissolve in a solventin a mixing manner, stirring is carried out under a heating condition, curing is carried out at a room temperature to obtain a precursor solution for standby: S2, the precursor solution obtained in the S1 is deposited on a substrate after hydrophilic pretreatment to obtain a semiconductor film, the semiconductor film is annealed to obtain a gallium-tin oxide semiconductor film. The molar ratio ofthe gallium element to the tin element is 0.5-1.5 to 1; and the concentration of the metal element in the precursor solution is 0.05 to 0.5 mol/L. According to the invention, the transistor prepared by the gallium-tin oxide semiconductor film has advantages of excellent electrical performance, high bias stability and low cost; and electrical properties like the carrier mobility and the threshold voltage are adjusted by adj