Resistive random access memory based on perovskite materials and preparation method thereof

The invention discloses a resistive random access memory based on a perovskite material and a preparation method thereof, and relates to the technical field of semiconductor materials and functional devices. The resistive random access memory sequentially comprises a top electrode, a halide perovskite layer, a titanium dioxide thin film layer, a bottom electrode and a glass substrate from top to bottom, a Zr element is doped in the halide perovskite material, and the molecular general formula of the halide perovskite layer material is ABX , wherein A=CH NH or Cs; B=Pb; and X=Cl, Br or I.According to the resistive random access memory based on the perovskite material and the preparation method thereof, only a layer of titanium dioxide film is additionally arranged between the bottomelectrode and the perovskite film layer, and the Zr element is doped in the perovskite film, so that the switching ratio and stability of the resistive random access memory are obviously improved, andthe power consumption of the dev