Sputtering method using prestabilized plasma

The invention relates to a sputtering method using prestabilized plasma, and concretely discloses a method for depositing a material layer on a substrate. The method comprises the following steps: igniting plasma for material deposition of a sputtering target material when the substrate is unexposed to the plasma; keeping the plasma until the substrate is exposed to the plasma and the material isdeposited on the substrate; and depositing the material on the substrate, wherein the substrate is positioned by a static deposition technology. 本发明涉及利用预稳定等离子体的工艺的溅镀方法，具体描述种沉积材料的层于基板上的方法。此方法包括当基板未暴露于等离子体时，点燃用于材料沉积的溅镀靶材的等离子体；维持等离子体至少直到基板暴露于等离子体来沉积材料于基板上；以及沉积材料于基板上，其中基板为了静态沉积工艺而定位。