CHEMICAL VAPOR DEPOSITION METHOD AND APPARATUS

A method of forming a filament assembly of a chemical vapor deposition (CVD) reactor, comprising at least one filament structure connected by a bridge, is disclosed. The filament structure comprises ahollow silicon filament integral with a silicon seed. Various embodiments of this invention are desc...

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Bibliographische Detailangaben
Hauptverfasser:	DESROSIER DANIEL J, FERO CHAD R
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A method of forming a filament assembly of a chemical vapor deposition (CVD) reactor, comprising at least one filament structure connected by a bridge, is disclosed. The filament structure comprises ahollow silicon filament integral with a silicon seed. Various embodiments of this invention are described, along with a CVD system comprising this filament assembly as well as a method of depositingsilicon onto this filament assembly. 种形成化学气相沉积(CVD)反应器的细丝组件的方法，包括由桥连接的至少细丝结构。该细丝结构包括与硅种子合成体的中空硅细丝。本发明描述了各种实施例，包括具有此细丝组件的CVD系统以及沉积硅于此细丝组件上的方法。