Semiconductor structure and manufacturing method thereof

The present application provides a semiconductor structure and a manufacturing method thereof. The manufacturing method comprises the following steps: S1, forming a first to-be-bonded structure and asecond to-be-bonded structure, wherein the first to-be-bonded structure comprises a sacrificial layer and a predetermined bonded structure layer, and the structure layer and the sacrificial layer forming a heterojunction; S2, applying an acting force F to the first to-be-bonded structure and/or the second to-be-bonded structure for a predetermined time, so that the first to-be-bonded structure andthe second to-be-bonded structure are attached, and the structure layer is in contact with the second to-be-bonded structure; heating the first to-be-bonded structure and the second to-be-bonded structure to form a pre-semiconductor structure; and S3, removing the sacrificial layer to form a semiconductor structure. According to the manufacturing method, a strain is introduced into the structurelayer, a strained structure