Plasma etching method

The invention relates to the technical field of integrated circuit manufacturing, and discloses a plasma etching method. The plasma etching method comprises the following steps of S1, carrying out a plasma etching operation on the front batch of wafers in a reaction chamber of a plasma etching machine table; S2, performing cleaning on the reaction chamber, and meanwhile, pumping helium gas into the reaction chamber from a helium gas pipeline of an electrostatic chuck; and S3, carrying out the plasma etching operation on the rear batch of wafers in the reaction chamber. According to the plasmaetching method, the reaction chamber is cleaned, while helium gas is introduced into the reaction chamber from the helium gas pipeline of the electrostatic chuck, so that in the cleaning process, theamount of a polymer which enters the helium pipeline from a helium pipeline port can be reduced, and pollution of the polymer to the helium pipeline in the whole cleaning process is favorably lowered,so that the etching defect