Power semiconductor device and a method for forming a power semiconductor device
The invention discloses a power semiconductor device and a method for forming a power semiconductor device. The power semiconductor device includes a power transistor arranged in a power device regionof a semiconductor substrate. The power semiconductor device further includes a first circuit arrang...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention discloses a power semiconductor device and a method for forming a power semiconductor device. The power semiconductor device includes a power transistor arranged in a power device regionof a semiconductor substrate. The power semiconductor device further includes a first circuit arranged in a first circuit region of the semiconductor substrate. The power semiconductor device furtherincludes a second circuit arranged in a second circuit region of the semiconductor substrate. The first circuit region is arranged at a first edge of the semiconductor substrate. The second circuit region is arranged at a second edge of the semiconductor substrate. The power device region is arranged between the first circuit region and the second circuit region.
本发明公开了功率半导体器件和用于形成功率半导体器件的方法。种功率半导体器件包括布置在半导体衬底的功率器件区中的至少个功率晶体管。功率半导体器件进步包括布置在半导体衬底的第电路区中的第电路。功率半导体器件进步包括布置在半导体衬底的第二电路区中的第二电路。半导体衬底的第电路区被布置在半导体衬底的第边缘处。半导体衬底的第二电路区被布置在半导体衬底的第二边缘处。功率器件区被布置在第电路区和第二电路区之间。 |
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