Method for Ion Implantation

A method for ion beam implantation is disclosed. The method provides an ion implantation with a multiple-geometric-orientation ion beam that accommodates a range of tilt angles. The range of tilt angles can be defined with a dose distribution specified across the range of tilt angles. The method comprises: acquiring ion implantation parameters, determining the number of exposure steps, selecting implantation parameters corresponding to the exposure steps, acquiring implantation data, defining a first implantation sequence, creating a multiple-geometric-orientation implant exposure sequence according to the first implantation sequence, and performing the ion implantation according to the multiple-geometric-orientation implant exposure sequence. 本发明公开了种离子束布植的方法。该方法提供种使用多重几何方向的离子束以产生倾斜角度范围的离子布植方法。该倾斜角度范围可以定义为指定在这个倾斜角度范围的剂量分布。这个方法包含:获得离子布植参数，决定曝光步骤的次数，选择相对应于曝光步骤的布植参数，获得布植数据，定义第布植序列，根据第布植序列创造多重几何方向布植曝光序列，以及根据多重几何方向离子曝光序列执行离子布植。