TRENCH-BASED MICROELECTROMECHANICAL TRANSDUCER AND METHOD FOR MANUFACTURING THE MICROELECTROMECHANICAL TRANSDUCER

The disclosure relates to a trench-based microelectromechanical transducer and a method for manufacturing the microelectromechanical transducer. For example, a microelectromechanical transducer includes: a semiconductor body, having a first surface and a second surface opposite to one another; a fir...

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Bibliographische Detailangaben
Hauptverfasser: POMARICO ANNA ANGELA, ROSELLI GIUDITTA, CALTABIANO DANIELE, ABBASI GAVARTI MOHAMMAD
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The disclosure relates to a trench-based microelectromechanical transducer and a method for manufacturing the microelectromechanical transducer. For example, a microelectromechanical transducer includes: a semiconductor body, having a first surface and a second surface opposite to one another; a first structural body, coupled to the first surface of the semiconductor body; a first sealed cavity between the semiconductor body and the first structural body; and an active area housed in the first sealed cavity, including at least two trenches and a sensor element between the trenches. The trenches extend along a vertical direction from the first surface towards the second surface of the semiconductor body. 本公开涉及基于沟槽的微机电换能器及制造该微机电换能器的方法。例如,种微机电换能器包括:半导体本体,具有彼此相对的第表面和第二表面;第结构本体,耦合至半导体本体的第表面;第密封腔,位于半导体本体和第结构本体之间;以及活跃区域,容纳在第密封腔中,包括至少两个沟槽以及沟槽之间的传感器元件。沟槽沿着从半导体本体的第表面朝向第二表面的垂直方向延伸。