PASSIVATION FILM DEPOSITION METHOD FOR LIGHT-EMITTING DIODE

The present invention relates to a passivation film deposition method for a light-emitting diode, comprising the steps of: depositing, on an upper part of a light-emitting diode of a substrate, a first passivation film having a silicon nitride (SiNx); and depositing, on an upper part of the first pa...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	KIM JONG-HWAN, YOON SUNG-YEAN, LEE HONG-JAE, SHIM WOO-PIL, LEE WOO-JIN, LEE DON-HEE
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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