PASSIVATION FILM DEPOSITION METHOD FOR LIGHT-EMITTING DIODE

The present invention relates to a passivation film deposition method for a light-emitting diode, comprising the steps of: depositing, on an upper part of a light-emitting diode of a substrate, a first passivation film having a silicon nitride (SiNx); and depositing, on an upper part of the first passivation film, a second passivation film having a silicon oxide (SiOx), wherein the ratio of the thickness of the first passivation film to the thickness of the second passivation film is 0.2-0.4:1. 本发明涉及种发光元件的保护膜沉积方法，所述保护膜沉积方法的特征在于包括：在衬底的发光元件的上部沉积包括硅氮化物(SiNx)的第保护膜的步骤；以及在所述第保护膜的上部沉积包括硅氧化物(SiOx)的第二保护膜的步骤；且所述第保护膜的厚度与第二保护膜的厚度的比率为0.2～0.4∶1。