PASSIVATION FILM DEPOSITION METHOD FOR LIGHT-EMITTING DIODE
The present invention relates to a passivation film deposition method for a light-emitting diode, comprising the steps of: depositing, on an upper part of a light-emitting diode of a substrate, a first passivation film having a silicon nitride (SiNx); and depositing, on an upper part of the first pa...
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| creator | KIM JONG-HWAN YOON SUNG-YEAN LEE HONG-JAE SHIM WOO-PIL LEE WOO-JIN LEE DON-HEE |
| description | The present invention relates to a passivation film deposition method for a light-emitting diode, comprising the steps of: depositing, on an upper part of a light-emitting diode of a substrate, a first passivation film having a silicon nitride (SiNx); and depositing, on an upper part of the first passivation film, a second passivation film having a silicon oxide (SiOx), wherein the ratio of the thickness of the first passivation film to the thickness of the second passivation film is 0.2-0.4:1.
本发明涉及种发光元件的保护膜沉积方法，所述保护膜沉积方法的特征在于包括：在衬底的发光元件的上部沉积包括硅氮化物(SiNx)的第保护膜的步骤；以及在所述第保护膜的上部沉积包括硅氧化物(SiOx)的第二保护膜的步骤；且所述第保护膜的厚度与第二保护膜的厚度的比率为0.2～0.4∶1。 |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN108780851A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN108780851A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN108780851A3</originalsourceid><addsrcrecordid>eNrjZLAOcAwO9gxzDPH091Nw8_TxVXBxDfAP9gTzfV1DPPxdFNz8gxR8PN09QnRdfT1DQjz93BVcPP1dXHkYWNMSc4pTeaE0N4Oim2uIs4duakF-fGpxQWJyal5qSbyzn6GBhbmFgYWpoaMxMWoA9HUpeA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>PASSIVATION FILM DEPOSITION METHOD FOR LIGHT-EMITTING DIODE</title><source>esp@cenet</source><creator>KIM JONG-HWAN ; YOON SUNG-YEAN ; LEE HONG-JAE ; SHIM WOO-PIL ; LEE WOO-JIN ; LEE DON-HEE</creator><creatorcontrib>KIM JONG-HWAN ; YOON SUNG-YEAN ; LEE HONG-JAE ; SHIM WOO-PIL ; LEE WOO-JIN ; LEE DON-HEE</creatorcontrib><description>The present invention relates to a passivation film deposition method for a light-emitting diode, comprising the steps of: depositing, on an upper part of a light-emitting diode of a substrate, a first passivation film having a silicon nitride (SiNx); and depositing, on an upper part of the first passivation film, a second passivation film having a silicon oxide (SiOx), wherein the ratio of the thickness of the first passivation film to the thickness of the second passivation film is 0.2-0.4:1.
本发明涉及种发光元件的保护膜沉积方法，所述保护膜沉积方法的特征在于包括：在衬底的发光元件的上部沉积包括硅氮化物(SiNx)的第保护膜的步骤；以及在所述第保护膜的上部沉积包括硅氧化物(SiOx)的第二保护膜的步骤；且所述第保护膜的厚度与第二保护膜的厚度的比率为0.2～0.4∶1。</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20181109&DB=EPODOC&CC=CN&NR=108780851A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20181109&DB=EPODOC&CC=CN&NR=108780851A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KIM JONG-HWAN</creatorcontrib><creatorcontrib>YOON SUNG-YEAN</creatorcontrib><creatorcontrib>LEE HONG-JAE</creatorcontrib><creatorcontrib>SHIM WOO-PIL</creatorcontrib><creatorcontrib>LEE WOO-JIN</creatorcontrib><creatorcontrib>LEE DON-HEE</creatorcontrib><title>PASSIVATION FILM DEPOSITION METHOD FOR LIGHT-EMITTING DIODE</title><description>The present invention relates to a passivation film deposition method for a light-emitting diode, comprising the steps of: depositing, on an upper part of a light-emitting diode of a substrate, a first passivation film having a silicon nitride (SiNx); and depositing, on an upper part of the first passivation film, a second passivation film having a silicon oxide (SiOx), wherein the ratio of the thickness of the first passivation film to the thickness of the second passivation film is 0.2-0.4:1.
本发明涉及种发光元件的保护膜沉积方法，所述保护膜沉积方法的特征在于包括：在衬底的发光元件的上部沉积包括硅氮化物(SiNx)的第保护膜的步骤；以及在所述第保护膜的上部沉积包括硅氧化物(SiOx)的第二保护膜的步骤；且所述第保护膜的厚度与第二保护膜的厚度的比率为0.2～0.4∶1。</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAOcAwO9gxzDPH091Nw8_TxVXBxDfAP9gTzfV1DPPxdFNz8gxR8PN09QnRdfT1DQjz93BVcPP1dXHkYWNMSc4pTeaE0N4Oim2uIs4duakF-fGpxQWJyal5qSbyzn6GBhbmFgYWpoaMxMWoA9HUpeA</recordid><startdate>20181109</startdate><enddate>20181109</enddate><creator>KIM JONG-HWAN</creator><creator>YOON SUNG-YEAN</creator><creator>LEE HONG-JAE</creator><creator>SHIM WOO-PIL</creator><creator>LEE WOO-JIN</creator><creator>LEE DON-HEE</creator><scope>EVB</scope></search><sort><creationdate>20181109</creationdate><title>PASSIVATION FILM DEPOSITION METHOD FOR LIGHT-EMITTING DIODE</title><author>KIM JONG-HWAN ; YOON SUNG-YEAN ; LEE HONG-JAE ; SHIM WOO-PIL ; LEE WOO-JIN ; LEE DON-HEE</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN108780851A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2018</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>KIM JONG-HWAN</creatorcontrib><creatorcontrib>YOON SUNG-YEAN</creatorcontrib><creatorcontrib>LEE HONG-JAE</creatorcontrib><creatorcontrib>SHIM WOO-PIL</creatorcontrib><creatorcontrib>LEE WOO-JIN</creatorcontrib><creatorcontrib>LEE DON-HEE</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KIM JONG-HWAN</au><au>YOON SUNG-YEAN</au><au>LEE HONG-JAE</au><au>SHIM WOO-PIL</au><au>LEE WOO-JIN</au><au>LEE DON-HEE</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PASSIVATION FILM DEPOSITION METHOD FOR LIGHT-EMITTING DIODE</title><date>2018-11-09</date><risdate>2018</risdate><abstract>The present invention relates to a passivation film deposition method for a light-emitting diode, comprising the steps of: depositing, on an upper part of a light-emitting diode of a substrate, a first passivation film having a silicon nitride (SiNx); and depositing, on an upper part of the first passivation film, a second passivation film having a silicon oxide (SiOx), wherein the ratio of the thickness of the first passivation film to the thickness of the second passivation film is 0.2-0.4:1.
本发明涉及种发光元件的保护膜沉积方法，所述保护膜沉积方法的特征在于包括：在衬底的发光元件的上部沉积包括硅氮化物(SiNx)的第保护膜的步骤；以及在所述第保护膜的上部沉积包括硅氧化物(SiOx)的第二保护膜的步骤；且所述第保护膜的厚度与第二保护膜的厚度的比率为0.2～0.4∶1。</abstract><oa>free_for_read</oa></addata></record> |
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| title | PASSIVATION FILM DEPOSITION METHOD FOR LIGHT-EMITTING DIODE |
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