Trench gate device structure having carrier storage region and method for manufacturing the same

The invention discloses a trench gate device structure having a carrier storage region and a method for manufacturing the same. The trench gate device structure comprises a semiconductor substrate oran epitaxial layer, wherein the surface of the semiconductor substrate or the epitaxial layer extends downward and is provided with a group of trench gates; a first doped region is arranged on the outer side of the trench gate; the first doped region is doped to form a first class of doped semiconductors, which have the same conductive type as the semiconductor substrate or the epitaxial layer, have a lateral and longitudinal gradient distribution and have a carrier storage action; such a structure facilitates more carriers to be stored here, thereby reducing on resistance and saturation voltage drop. A method for manufacturing the trench gate device structure is also disclosed, which can improve the processing difficulty and high cost of the existing method. The trench gate device structure having a carrier stora