Wafer surface planarization method

The invention provides a wafer surface planarization method. The wafer surface planarization method comprises the following steps of 1) providing a wafer, wherein the wafer comprises a first surface and a second surface which are opposite to each other; 2) forming a curing planarization layer on the first surface of the wafer; 3) grinding the second surface of the wafer; 4) grinding the curing planarization layer and the first surface of the wafer to remove the curing planarization layer, and flattening the first surface of the wafer. By the wafer planarization method, surface nanometer morphology of a wafer surface can be thoroughly eliminated, and the wafer planarization method has the advantages of simple process step, relatively high efficiency and the like and is easy to operate. 本发明提供种晶圆表面平坦化方法，包括以下步骤：1）提供晶圆，所述晶圆包括相对的第表面及第二表面；2）在所述晶圆的第表面形成固化平坦层；3）对所述晶圆的第二表面进行研磨处理；4）对所述固化平坦层及所述晶圆的第表面进行研磨处理，以去除所述固化平坦层，并将所述晶圆的第表面平坦化。本发明的晶圆平坦化方法可以彻底消除晶圆表面的表面纳米形貌，具有工艺步骤简单、易于操作、效率较高等优点。