SEMICONDUCTOR DEVICES COMPRISING A PINNED PHOTODIODE STRUCTURE

A semiconductor device operable to demodulate incident modulated electromagnetic radiation, the semiconductor device comprising: a pinned photodiode structure including a substrate of a first type, animplant layer of a second type disposed within the substrate, first and second auxiliary implant layers of the second type disposed within the substrate and each disposed adjacent to the implant layer of the second type, an implant layer of the first type disposed within the implant layer of the second type and extending into the first and second auxiliary implant layers of the second type, an insulator disposed on a surface of the substrate, and a photo-detection region; first and second transfer gates disposed on a surface of the insulator, the transfer gates being operable to generate a field within the substrate; and first and second floating diffusion implant layers of the second type disposed within the substrate. 种可操作来解调入射的调制电磁辐射的半导体装置，所述半导体装置包括：钉扎光电二极管结构，包括第类型的基板、设置在基板内的第二类型的注入层、设置在基板内且各自邻近第二类型的注入层设置的第二类型