PROJECTION EXPOSURE APPARATUS AND METHOD FOR MEASURING A PROJECTION LENS

Microlithographic projection exposure apparatus (100), having a projection lens (150) for imaging an object plane (155) onto an image plane (156), wherein an immersion liquid is at least temporarily provided during operation of the projection exposure apparatus (100) between the projection lens (150...

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Bibliographische Detailangaben
Hauptverfasser:	HEMPELMANN UWE, SCHLEICHER FRANK, SCHADT FRANK, FOCA EUGEN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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Beschreibung
Zusammenfassung:	Microlithographic projection exposure apparatus (100), having a projection lens (150) for imaging an object plane (155) onto an image plane (156), wherein an immersion liquid is at least temporarily provided during operation of the projection exposure apparatus (100) between the projection lens (150) and the image plane (156), wherein a measurement structure (121) is arranged in the immersion liquid, wherein the measurement structure (121) is configured to generate a measurement pattern, having a measurement device (130, 160) for measuring the measurement pattern, and wherein the measurement structure (121) has an absorption layer (125) comprising silicon oxide and/or silicon oxynitride and/or nitride. 微光刻投射曝光设备(100)，具有将物平面(155)成像至像平面(156)的投射镜头(150)，其中在投射曝光设备(100)的操作期间至少暂时地提供浸没液体于投射镜头(150)与像平面(156)之间，其中测量结构(121)配置于浸没液体中，其中测量结构(121)构造为产生测量图案；具有测量该测量图案的测量装置(130，160)，且其中测量结构(121)具有包含氧化硅和/或氮氧化硅和/或氮化物的吸收层(125)。