DEVICE FOR PROVIDING PROCESS GAS IN COATING DEVICE

The invention relates to a device for providing a process gas in a coating device, comprising a housing (1); a source housing (2) which is arranged in the housing and which contains an evaporation device (3, 3', 3") for liquid or solid starting materials; a first gas feed line (4) leading...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	MEYER JORG, BECCARD BIRGIT IRMGARD, POQUE ANDREAS
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The invention relates to a device for providing a process gas in a coating device, comprising a housing (1); a source housing (2) which is arranged in the housing and which contains an evaporation device (3, 3', 3") for liquid or solid starting materials; a first gas feed line (4) leading into the source housing (2) for generating a first gas flow (5) through the source housing (2); a first gas outlet channel (6) for discharging the first gas flow (5) from the source housing (2) into a transport line (7); a second gas feed line (8) leading into the housing (1) for generating a second gas flow(9) through the housing (1) outside of the source housing (2); and a second gas outlet channel (10) for discharging the second gas flow (9) out of the housing (1) into the transport line (7), said second gas outlet channel surrounding the first gas outlet channel (6) and being equipped with a back-diffusion barrier (11). According to the invention, the back-diffusion barrier (11) is designed suchthat the position of two g