Wafer manufacturing method

A wafer manufacturing method for manufacturing wafers by cutting a single crystal ingot using a wire saw, wherein, of the regions of the wire of the wire saw used in cutting a first single crystal ingot, a second single crystal ingot is cut using only the stable wire diameter regions (R2) in which t...

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Bibliographische Detailangaben
Hauptverfasser:	TAKADA MASAO, FUNAYAMA MAKOTO, YOSHIHARA TSUKASA, CHIWATA KENJI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING PERFORMING OPERATIONS POLISHING SEMICONDUCTOR DEVICES TRANSPORTING WORKING CEMENT, CLAY, OR STONE WORKING STONE OR STONE-LIKE MATERIALS
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Beschreibung
Zusammenfassung:	A wafer manufacturing method for manufacturing wafers by cutting a single crystal ingot using a wire saw, wherein, of the regions of the wire of the wire saw used in cutting a first single crystal ingot, a second single crystal ingot is cut using only the stable wire diameter regions (R2) in which the amount of wear is stable at a maximum value and the diameter is a constant minimum value. 在通过利用线锯切断单结晶棒来制造晶圆的晶圆制造方法中，在线锯的线上的用于切断第1单晶锭的区域中，只使用磨损量以最大值维持稳定且直径以最小值维持恒定的线径稳定区域(R2)，来切断第2单晶锭。