Manufacturing method of porous copper film and porous copper film using the same

According to the present invention, a manufacturing method of a porous copper film comprises the following steps of: forming different layers on a metal carrier; growing copper in the shape of an island with electroless copper plating on the metal carrier on which the different layers are formed; fo...

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Bibliographische Detailangaben
Hauptverfasser:	CHUN SUNG-WOOK, HONG JUN-MO, JEON SEON-GI, LEE DAE-HOON, KANG YOUN-BONG, KIM IK-BEOM, PARK HYEONG-GYU
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	APPARATUS THEREFOR CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTROFORMING ELECTROLYTIC OR ELECTROPHORETIC PROCESSES INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	According to the present invention, a manufacturing method of a porous copper film comprises the following steps of: forming different layers on a metal carrier; growing copper in the shape of an island with electroless copper plating on the metal carrier on which the different layers are formed; forming a porous copper film by performing electrolytic copper plating after the electroless copper plating; and separating the porous copper film from the different layers. 本发明提供种多孔铜箔的制造方法。所述方法包括在金属载体上形成释放层，通过无电镀铜在形成有释放层的金属载体上生长铜岛，通过电镀铜形成多孔铜薄层，并从释放层剥离多孔铜薄层。