Multi-quantum- well-structured perovskite light-emitting diode and preparation method thereof

The invention discloses a multi-quantum-well-structured halogen perovskite light-emitting diode composed of CsPbBr3/TmPyPB, and studies the effect of the multi-quantum well structure on the electroluminescence performance and stability of the perovskite light-emitting diode. The optimum device in the present invention is a device having a quantum well number of 4, the maximum current efficiency ofthe device is 9.16 cd/A, and the maximum external quantum efficiency is 2.37%. The current efficiency and the external quantum efficiency are increased by more than four times compared with those ofa reference device with a quantum well number of one. At the same time, the stability of the device with the quantum well number of 4 is 50 times that of a single quantum well device. The improvementof the device performance is mainly due to the improvement of the film quality, the improvement of electron injection and transmission performance, the expansion of exciton formation regions, and theenhancement of exciton bindi