Monolithic integrated MEMS pressure sensor and preparation method thereof
The invention discloses a monolithic integrated MEMS pressure sensor and a preparation method thereof. The monolithic integrated MEMS pressure sensor comprises: a monolithic integrated pressure chip,a pressure buffer layer, a substrate, pin frames, wires and a plastic package; the monolithic integra...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention discloses a monolithic integrated MEMS pressure sensor and a preparation method thereof. The monolithic integrated MEMS pressure sensor comprises: a monolithic integrated pressure chip,a pressure buffer layer, a substrate, pin frames, wires and a plastic package; the monolithic integrated pressure chip is internally integrated with a single crystal silicon pressure sensitive film, pressure resistive pressure sensitive bridges and a signal conditioning circuit. The monolithic integrated MEMS pressure sensor has the characteristics of high integration, large batch size, low cost and small size of mechanical and electronic systems, and is suitable for various small-sized application fields.
本发明公开了种单片集成MEMS压力传感器及其制备方法。本发明的单片集成MEMS压力传感器包括:单片集成压力芯片、压力缓冲层、基板、引脚框、导线和塑封体;其中,单片集成压力芯片的内部集成单晶硅压力敏感薄膜、压阻式压力敏感电桥和信号调理电路。本发明的单片集成MEMS压力传感器具有机械和电子系统高度集成、批量大、成本低、体积小等特点,适应多种小尺寸应用领域。 |
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