Method for preparing flexible microelectrode circuit by large-area laser direct writing
The invention discloses a method for preparing a flexible microelectrode circuit by large-area laser direct writing, and belongs to the technical field of microelectronics. The method comprises the following steps: selecting a substrate and preprocessing the substrate; preparing a copper film on the...
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Patent |
| Sprache: | chi ; eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | SHAN GUANGCUN QIN RUZHAN HU MINGJUN |
| description | The invention discloses a method for preparing a flexible microelectrode circuit by large-area laser direct writing, and belongs to the technical field of microelectronics. The method comprises the following steps: selecting a substrate and preprocessing the substrate; preparing a copper film on the pre-processed substrate; using mapping software to design a required microelectrode circuit diagram; and finally, using laser to directly prepare the designed microelectrode circuit diagram on the prepared copper film. The method for preparing the flexible microelectrode circuit by the large-area laser direct writing provided by the invention is based on a laser direct writing technology, and the provided method is simple and easy to operate, and has no pollution; the prepared film has uniformthickness, smooth and flat surface and good reliability; and a large-area micron-scale interconnected conduction line with the controllable thickness and size can be prepared, and the method can be used for circuit writing an |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN108633186A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN108633186A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN108633186A3</originalsourceid><addsrcrecordid>eNqNjLEKwjAURbs4iPoPzw8oWAKlqxTFRSfBsaTJTX0Qm_ASUf_eDH6A0znD4Syr2xn5Hiy5IBQFUQvPEzmPN48e9GAjAR4mS7Agw2KenGn8kNcyodYCXTRByLKUjF7CuSzW1cJpn7D5cVVtj4drf6oRw4AUtcGMPPSXZte1SjVdu1f_NF-LTDpH</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method for preparing flexible microelectrode circuit by large-area laser direct writing</title><source>esp@cenet</source><creator>SHAN GUANGCUN ; QIN RUZHAN ; HU MINGJUN</creator><creatorcontrib>SHAN GUANGCUN ; QIN RUZHAN ; HU MINGJUN</creatorcontrib><description>The invention discloses a method for preparing a flexible microelectrode circuit by large-area laser direct writing, and belongs to the technical field of microelectronics. The method comprises the following steps: selecting a substrate and preprocessing the substrate; preparing a copper film on the pre-processed substrate; using mapping software to design a required microelectrode circuit diagram; and finally, using laser to directly prepare the designed microelectrode circuit diagram on the prepared copper film. The method for preparing the flexible microelectrode circuit by the large-area laser direct writing provided by the invention is based on a laser direct writing technology, and the provided method is simple and easy to operate, and has no pollution; the prepared film has uniformthickness, smooth and flat surface and good reliability; and a large-area micron-scale interconnected conduction line with the controllable thickness and size can be prepared, and the method can be used for circuit writing an</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS ; PRINTED CIRCUITS ; SEMICONDUCTOR DEVICES</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20181009&DB=EPODOC&CC=CN&NR=108633186A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20181009&DB=EPODOC&CC=CN&NR=108633186A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SHAN GUANGCUN</creatorcontrib><creatorcontrib>QIN RUZHAN</creatorcontrib><creatorcontrib>HU MINGJUN</creatorcontrib><title>Method for preparing flexible microelectrode circuit by large-area laser direct writing</title><description>The invention discloses a method for preparing a flexible microelectrode circuit by large-area laser direct writing, and belongs to the technical field of microelectronics. The method comprises the following steps: selecting a substrate and preprocessing the substrate; preparing a copper film on the pre-processed substrate; using mapping software to design a required microelectrode circuit diagram; and finally, using laser to directly prepare the designed microelectrode circuit diagram on the prepared copper film. The method for preparing the flexible microelectrode circuit by the large-area laser direct writing provided by the invention is based on a laser direct writing technology, and the provided method is simple and easy to operate, and has no pollution; the prepared film has uniformthickness, smooth and flat surface and good reliability; and a large-area micron-scale interconnected conduction line with the controllable thickness and size can be prepared, and the method can be used for circuit writing an</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS</subject><subject>PRINTED CIRCUITS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjLEKwjAURbs4iPoPzw8oWAKlqxTFRSfBsaTJTX0Qm_ASUf_eDH6A0znD4Syr2xn5Hiy5IBQFUQvPEzmPN48e9GAjAR4mS7Agw2KenGn8kNcyodYCXTRByLKUjF7CuSzW1cJpn7D5cVVtj4drf6oRw4AUtcGMPPSXZte1SjVdu1f_NF-LTDpH</recordid><startdate>20181009</startdate><enddate>20181009</enddate><creator>SHAN GUANGCUN</creator><creator>QIN RUZHAN</creator><creator>HU MINGJUN</creator><scope>EVB</scope></search><sort><creationdate>20181009</creationdate><title>Method for preparing flexible microelectrode circuit by large-area laser direct writing</title><author>SHAN GUANGCUN ; QIN RUZHAN ; HU MINGJUN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN108633186A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2018</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS</topic><topic>PRINTED CIRCUITS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>SHAN GUANGCUN</creatorcontrib><creatorcontrib>QIN RUZHAN</creatorcontrib><creatorcontrib>HU MINGJUN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SHAN GUANGCUN</au><au>QIN RUZHAN</au><au>HU MINGJUN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method for preparing flexible microelectrode circuit by large-area laser direct writing</title><date>2018-10-09</date><risdate>2018</risdate><abstract>The invention discloses a method for preparing a flexible microelectrode circuit by large-area laser direct writing, and belongs to the technical field of microelectronics. The method comprises the following steps: selecting a substrate and preprocessing the substrate; preparing a copper film on the pre-processed substrate; using mapping software to design a required microelectrode circuit diagram; and finally, using laser to directly prepare the designed microelectrode circuit diagram on the prepared copper film. The method for preparing the flexible microelectrode circuit by the large-area laser direct writing provided by the invention is based on a laser direct writing technology, and the provided method is simple and easy to operate, and has no pollution; the prepared film has uniformthickness, smooth and flat surface and good reliability; and a large-area micron-scale interconnected conduction line with the controllable thickness and size can be prepared, and the method can be used for circuit writing an</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | chi ; eng |
| recordid | cdi_epo_espacenet_CN108633186A |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS PRINTED CIRCUITS SEMICONDUCTOR DEVICES |
| title | Method for preparing flexible microelectrode circuit by large-area laser direct writing |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-19T11%3A53%3A04IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=SHAN%20GUANGCUN&rft.date=2018-10-09&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN108633186A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |