Preparation method of Ge/Sb type superlattice phase change thin film material used for phase change random access memory

The invention discloses a preparation method of a Ge/Sb type superlattice phase change thin film material used for a phase change random access memory. The Ge/Sb type superlattice phase change thin film material adopts a multi-layer-film structure, and formed by a Ge layer and a Sb layer in an alter...

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Bibliographische Detailangaben
Hauptverfasser:	YUAN LI, HU YIFENG, WU SHICHEN, SHEN DAHUA, WU WEIHUA, ZHU XIAOQIN, ZHANG JIANHAO, ZOU HUA, SUI YONGXING
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES METALLURGY NANOTECHNOLOGY PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING
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Beschreibung
Zusammenfassung:	The invention discloses a preparation method of a Ge/Sb type superlattice phase change thin film material used for a phase change random access memory. The Ge/Sb type superlattice phase change thin film material adopts a multi-layer-film structure, and formed by a Ge layer and a Sb layer in an alternate deposition and compounding manner, wherein one Ge layer and one Sb layer are used as one alternate period, and the Ge layer in the next alternate period is deposited above the Sb layer on the former alternate period. The Ge/Sb type superlattice phase change thin film material, by virtue of theclamping effect of a multi-layer interface in the type superlattice structure, reduces the grain crystal dimensions, thereby shortening the crystallization time, suppressing crystallization and improving material thermal stability while accelerating phase change speed. The RESET voltage of the Ge/Sb type superlattice phase change thin film material disclosed in the invention is 30% or above lowerthan the RESET voltage of