Inorganic bonding transfer method for rigid-flexible substrate of epitaxial layer

The invention discloses an inorganic bonding transfer method for a rigid-flexible substrate of an epitaxial layer. The method comprises the following steps of respectively plating a bonding metal layer on the surface of an epitaxial wafer and the surface of a flexible substrate, and carrying out thermal compression bonding to obtain a flexible substrate-epitaxial wafer; respectively plating an inorganic bonding metal layer on a rigid supporting substrate and a flexible substrate of the flexible substrate-epitaxial wafer, and carrying out thermal compression reversible bonding; preparing the epitaxial wafer into a solar cell device; and stripping the rigid supporting substrate through heating, and completing transfer of the rigid-flexible substrate of the epitaxial layer. The epitaxial wafer comprises a growth substrate, and a solar cell material growing on the growth substrate, wherein the thermal stripping temperature of the rigid supporting substrate of the solar cell device is not lower than the melting po