High-purity gallium crystallization device and method

High-purity gallium crystallization device and method

The invention provides a high-purity gallium crystallization device and method. The crystallization device comprises a crystallization pipe, a thermostatic waterbath, a thermostatic stirrer and a stirring control device; the thermostatic stirrer is arranged in a crystallization pipe, the temperature...

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Hauptverfasser: BI XIAOGE, QIN ZENGYAN, LIU GANGXIANG, DONG JIANXIONG, ZHAO YAWEI, ZHAO DONGLIANG, HU BO, CHENG TAO, SHEN LE, ZHANG YU, PAN SHOUDAO, MENG XIAOYU
Format: Patent
Sprache:chi ; eng
Schlagworte:
CHEMISTRY
FERROUS OR NON-FERROUS ALLOYS
METALLURGY
PRETREATMENT OF RAW MATERIALS
PRODUCTION AND REFINING OF METALS
TREATMENT OF ALLOYS OR NON-FERROUS METALS
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creator BI XIAOGE
QIN ZENGYAN
LIU GANGXIANG
DONG JIANXIONG
ZHAO YAWEI
ZHAO DONGLIANG
HU BO
CHENG TAO
SHEN LE
ZHANG YU
PAN SHOUDAO
MENG XIAOYU
description The invention provides a high-purity gallium crystallization device and method. The crystallization device comprises a crystallization pipe, a thermostatic waterbath, a thermostatic stirrer and a stirring control device; the thermostatic stirrer is arranged in a crystallization pipe, the temperature difference exists between the thermostatic stirrer and the thermostatic waterbath, and the crystallization pipe is arranged in the thermostatic waterbath; and the upper end of the thermostatic stirrer is provided with the stirring control device. The method for preparing high-purity gallium throughthe crystallization device comprises the steps that a molten metal gallium raw material is added into the crystallization pipe, the temperature of the thermostatic waterbath is controlled to be 20-29DEG C, the temperature of the thermostatic stirrer is controlled to be 30-40 DEG C, the thermostatic stirrer moves up and down and is controlled to move in a reciprocating mode by 2-20 times per minute, the crystallization ti
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN108588449A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN108588449A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN108588449A3</originalsourceid><addsrcrecordid>eNrjZDD1yEzP0C0oLcosqVRIT8zJySzNVUguqiwuAbGrEksy8_MUUlLLMpNTFRLzUhRyU0sy8lN4GFjTEnOKU3mhNDeDoptriLOHbmpBfnxqcUFicmpeakm8s5-hgYWphYWJiaWjMTFqAJuqLa8</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>High-purity gallium crystallization device and method</title><source>esp@cenet</source><creator>BI XIAOGE ; QIN ZENGYAN ; LIU GANGXIANG ; DONG JIANXIONG ; ZHAO YAWEI ; ZHAO DONGLIANG ; HU BO ; CHENG TAO ; SHEN LE ; ZHANG YU ; PAN SHOUDAO ; MENG XIAOYU</creator><creatorcontrib>BI XIAOGE ; QIN ZENGYAN ; LIU GANGXIANG ; DONG JIANXIONG ; ZHAO YAWEI ; ZHAO DONGLIANG ; HU BO ; CHENG TAO ; SHEN LE ; ZHANG YU ; PAN SHOUDAO ; MENG XIAOYU</creatorcontrib><description>The invention provides a high-purity gallium crystallization device and method. The crystallization device comprises a crystallization pipe, a thermostatic waterbath, a thermostatic stirrer and a stirring control device; the thermostatic stirrer is arranged in a crystallization pipe, the temperature difference exists between the thermostatic stirrer and the thermostatic waterbath, and the crystallization pipe is arranged in the thermostatic waterbath; and the upper end of the thermostatic stirrer is provided with the stirring control device. The method for preparing high-purity gallium throughthe crystallization device comprises the steps that a molten metal gallium raw material is added into the crystallization pipe, the temperature of the thermostatic waterbath is controlled to be 20-29DEG C, the temperature of the thermostatic stirrer is controlled to be 30-40 DEG C, the thermostatic stirrer moves up and down and is controlled to move in a reciprocating mode by 2-20 times per minute, the crystallization ti</description><language>chi ; eng</language><subject>CHEMISTRY ; FERROUS OR NON-FERROUS ALLOYS ; METALLURGY ; PRETREATMENT OF RAW MATERIALS ; PRODUCTION AND REFINING OF METALS ; TREATMENT OF ALLOYS OR NON-FERROUS METALS</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20180928&amp;DB=EPODOC&amp;CC=CN&amp;NR=108588449A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20180928&amp;DB=EPODOC&amp;CC=CN&amp;NR=108588449A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>BI XIAOGE</creatorcontrib><creatorcontrib>QIN ZENGYAN</creatorcontrib><creatorcontrib>LIU GANGXIANG</creatorcontrib><creatorcontrib>DONG JIANXIONG</creatorcontrib><creatorcontrib>ZHAO YAWEI</creatorcontrib><creatorcontrib>ZHAO DONGLIANG</creatorcontrib><creatorcontrib>HU BO</creatorcontrib><creatorcontrib>CHENG TAO</creatorcontrib><creatorcontrib>SHEN LE</creatorcontrib><creatorcontrib>ZHANG YU</creatorcontrib><creatorcontrib>PAN SHOUDAO</creatorcontrib><creatorcontrib>MENG XIAOYU</creatorcontrib><title>High-purity gallium crystallization device and method</title><description>The invention provides a high-purity gallium crystallization device and method. The crystallization device comprises a crystallization pipe, a thermostatic waterbath, a thermostatic stirrer and a stirring control device; the thermostatic stirrer is arranged in a crystallization pipe, the temperature difference exists between the thermostatic stirrer and the thermostatic waterbath, and the crystallization pipe is arranged in the thermostatic waterbath; and the upper end of the thermostatic stirrer is provided with the stirring control device. The method for preparing high-purity gallium throughthe crystallization device comprises the steps that a molten metal gallium raw material is added into the crystallization pipe, the temperature of the thermostatic waterbath is controlled to be 20-29DEG C, the temperature of the thermostatic stirrer is controlled to be 30-40 DEG C, the thermostatic stirrer moves up and down and is controlled to move in a reciprocating mode by 2-20 times per minute, the crystallization ti</description><subject>CHEMISTRY</subject><subject>FERROUS OR NON-FERROUS ALLOYS</subject><subject>METALLURGY</subject><subject>PRETREATMENT OF RAW MATERIALS</subject><subject>PRODUCTION AND REFINING OF METALS</subject><subject>TREATMENT OF ALLOYS OR NON-FERROUS METALS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDD1yEzP0C0oLcosqVRIT8zJySzNVUguqiwuAbGrEksy8_MUUlLLMpNTFRLzUhRyU0sy8lN4GFjTEnOKU3mhNDeDoptriLOHbmpBfnxqcUFicmpeakm8s5-hgYWphYWJiaWjMTFqAJuqLa8</recordid><startdate>20180928</startdate><enddate>20180928</enddate><creator>BI XIAOGE</creator><creator>QIN ZENGYAN</creator><creator>LIU GANGXIANG</creator><creator>DONG JIANXIONG</creator><creator>ZHAO YAWEI</creator><creator>ZHAO DONGLIANG</creator><creator>HU BO</creator><creator>CHENG TAO</creator><creator>SHEN LE</creator><creator>ZHANG YU</creator><creator>PAN SHOUDAO</creator><creator>MENG XIAOYU</creator><scope>EVB</scope></search><sort><creationdate>20180928</creationdate><title>High-purity gallium crystallization device and method</title><author>BI XIAOGE ; QIN ZENGYAN ; LIU GANGXIANG ; DONG JIANXIONG ; ZHAO YAWEI ; ZHAO DONGLIANG ; HU BO ; CHENG TAO ; SHEN LE ; ZHANG YU ; PAN SHOUDAO ; MENG XIAOYU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN108588449A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2018</creationdate><topic>CHEMISTRY</topic><topic>FERROUS OR NON-FERROUS ALLOYS</topic><topic>METALLURGY</topic><topic>PRETREATMENT OF RAW MATERIALS</topic><topic>PRODUCTION AND REFINING OF METALS</topic><topic>TREATMENT OF ALLOYS OR NON-FERROUS METALS</topic><toplevel>online_resources</toplevel><creatorcontrib>BI XIAOGE</creatorcontrib><creatorcontrib>QIN ZENGYAN</creatorcontrib><creatorcontrib>LIU GANGXIANG</creatorcontrib><creatorcontrib>DONG JIANXIONG</creatorcontrib><creatorcontrib>ZHAO YAWEI</creatorcontrib><creatorcontrib>ZHAO DONGLIANG</creatorcontrib><creatorcontrib>HU BO</creatorcontrib><creatorcontrib>CHENG TAO</creatorcontrib><creatorcontrib>SHEN LE</creatorcontrib><creatorcontrib>ZHANG YU</creatorcontrib><creatorcontrib>PAN SHOUDAO</creatorcontrib><creatorcontrib>MENG XIAOYU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>BI XIAOGE</au><au>QIN ZENGYAN</au><au>LIU GANGXIANG</au><au>DONG JIANXIONG</au><au>ZHAO YAWEI</au><au>ZHAO DONGLIANG</au><au>HU BO</au><au>CHENG TAO</au><au>SHEN LE</au><au>ZHANG YU</au><au>PAN SHOUDAO</au><au>MENG XIAOYU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>High-purity gallium crystallization device and method</title><date>2018-09-28</date><risdate>2018</risdate><abstract>The invention provides a high-purity gallium crystallization device and method. The crystallization device comprises a crystallization pipe, a thermostatic waterbath, a thermostatic stirrer and a stirring control device; the thermostatic stirrer is arranged in a crystallization pipe, the temperature difference exists between the thermostatic stirrer and the thermostatic waterbath, and the crystallization pipe is arranged in the thermostatic waterbath; and the upper end of the thermostatic stirrer is provided with the stirring control device. The method for preparing high-purity gallium throughthe crystallization device comprises the steps that a molten metal gallium raw material is added into the crystallization pipe, the temperature of the thermostatic waterbath is controlled to be 20-29DEG C, the temperature of the thermostatic stirrer is controlled to be 30-40 DEG C, the thermostatic stirrer moves up and down and is controlled to move in a reciprocating mode by 2-20 times per minute, the crystallization ti</abstract><oa>free_for_read</oa></addata></record>
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subjects CHEMISTRY
FERROUS OR NON-FERROUS ALLOYS
METALLURGY
PRETREATMENT OF RAW MATERIALS
PRODUCTION AND REFINING OF METALS
TREATMENT OF ALLOYS OR NON-FERROUS METALS
title High-purity gallium crystallization device and method
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