High-purity gallium crystallization device and method

The invention provides a high-purity gallium crystallization device and method. The crystallization device comprises a crystallization pipe, a thermostatic waterbath, a thermostatic stirrer and a stirring control device; the thermostatic stirrer is arranged in a crystallization pipe, the temperature...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	BI XIAOGE, QIN ZENGYAN, LIU GANGXIANG, DONG JIANXIONG, ZHAO YAWEI, ZHAO DONGLIANG, HU BO, CHENG TAO, SHEN LE, ZHANG YU, PAN SHOUDAO, MENG XIAOYU
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	CHEMISTRY FERROUS OR NON-FERROUS ALLOYS METALLURGY PRETREATMENT OF RAW MATERIALS PRODUCTION AND REFINING OF METALS TREATMENT OF ALLOYS OR NON-FERROUS METALS
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Beschreibung
Zusammenfassung:	The invention provides a high-purity gallium crystallization device and method. The crystallization device comprises a crystallization pipe, a thermostatic waterbath, a thermostatic stirrer and a stirring control device; the thermostatic stirrer is arranged in a crystallization pipe, the temperature difference exists between the thermostatic stirrer and the thermostatic waterbath, and the crystallization pipe is arranged in the thermostatic waterbath; and the upper end of the thermostatic stirrer is provided with the stirring control device. The method for preparing high-purity gallium throughthe crystallization device comprises the steps that a molten metal gallium raw material is added into the crystallization pipe, the temperature of the thermostatic waterbath is controlled to be 20-29DEG C, the temperature of the thermostatic stirrer is controlled to be 30-40 DEG C, the thermostatic stirrer moves up and down and is controlled to move in a reciprocating mode by 2-20 times per minute, the crystallization ti