Low-dark-count-rate CMOS SPAD photoelectric device

The invention provides a low-dark-count-rate CMOS SPAD photoelectric device. A P-well layer is added based on a routine P+/N-well type SPAD structure. The P-well layer is arranged between the P+ layerand the N-well layer. Furthermore, an N-well clearance is utilized as a virtual protecting ring of t...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	WANG WEI, CHEN TING, WANG GUANYU, ZENG HONG'AN, WANG GUANG, TANG ZHENGWEI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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