Ge/Sb-type superlattice phase change film material for high-speed low-power phase-change memory

The invention discloses a Ge/Sb-type superlattice phase change film material for a high-speed low-power phase change memory. The material is characterized in that the material of a multilayer film structure is formed by depositing and combining Ge and Sb layers alternatively, one Ge layer and one Sb...

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Bibliographische Detailangaben
Hauptverfasser:	YUAN LI, HU YIFENG, WU SHICHEN, SHEN DAHUA, WU WEIHUA, ZHU XIAOQIN, ZHANG JIANHAO, ZOU HUA, SUI YONGXING
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES METALLURGY NANOTECHNOLOGY PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING
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Beschreibung
Zusammenfassung:	The invention discloses a Ge/Sb-type superlattice phase change film material for a high-speed low-power phase change memory. The material is characterized in that the material of a multilayer film structure is formed by depositing and combining Ge and Sb layers alternatively, one Ge layer and one Sb layer serve as an alternative period, and the Ge layer of the latter alternative layer is depositedon the Sb layer of the former alternative period. The Ge/Sb-type superlattice phase change film material utilizes the clamping effect of a multilayer interface in the superlattice structure, the sizeof the crystal grains is reduced, the crystallization time is shortened, crystallization is inhibited, the thermal stability of the material is improved, and the phase change speed is improved. The RESEST voltage of the Ge/Sb-type superlattice phase change film material is over 30% lower than that of a GE2Sb2Te5 film under the same voltage pulses, and thus, the power consumption of the Ge/Sb-typesuperlattice phase change