A full inorganic perovskite resistive random access memory and a method for preparing the same

The invention provides a full inorganic perovskite resistive random access memory and a method for preparing the same. Structurally, the full inorganic perovskite resistive random access memory comprises a bottom electrode, a resistive layer and a top electrode which are arranged from bottom to top successively, wherein the bottom electrode is an ITO, the resistive layer is a CsPbBr3 thin film, and the top electrode is metal Pt, Au or W. The method comprises the steps of dissolving CsPbBr3 powder in a DMSO solution to prepare a precursor solution; spin-coating the ITO bottom electrode with theprecursor solution with a spin coater; adding methylbenzene as an anti-solvent dropwise to make a perovskite layer crystallize quickly; performing annealing for 10-30 min at a temperature of 100-150DEG C to obtain a dense CsPbBr3 polycrystalline film; depositing the top electrode at the surface of the CsPbBr3 film. The resistive layer of the full inorganic perovskite resistive random access memory is made of a full inorg