Germanium-silicon epitaxy manufacturing method

The present invention discloses a germanium-silicon epitaxy manufacturing method. The method comprises the following steps of: performing SiCoNi etching to remove an oxide layer; employing hydrogen toremove carbon; performing epitaxy manufacturing; manufacturing a protection layer to allow the protection layer to completely cover germanium-silicon epitaxy nodes; performing whole etching accordingto the thickness of the protection layer to remove the protection layer; and depositing a silicon coating layer. The germanium-silicon epitaxy manufacturing method can avoid reduction of a device breakdown voltage caused by germanium-silicon epitaxy nodes so as to improve the performances of the device. 本发明公开了种锗硅外延制造方法，包括以下步骤：SiCoNi刻蚀去除氧化层；利用氢气去除碳；锗硅外延制造；制造保护层使保护层完全覆盖锗硅外延结节；按保护层的厚度整体刻蚀去除保护层；淀积硅覆盖层。本发明的锗硅外延制造方法能避免由于锗硅锗硅外延结节造成的器件击穿电压降低，进而提高器件的性能。